CSD25481F4 20 V P-Channel FemtoFET™ MOSFET

1 Features

• Ultra-low on resistance

• Ultra-low Qg and Qgd

• High operating drain current

• Ultra-small footprint (0402 Case Size)

– 1 mm × 0.6 mm

• Ultra-low profile

– 0.36 mm max height

• Integrated ESD protection diode

– Rated >4 kV HBM

– Rated >2 kV CDM

• Lead and halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Optimized for general purpose switching

applications

• Battery applications

• Handheld and mobile applications

3 Description

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET

is designed and optimized to minimize the footprint

in many handheld and mobile applications. This

technology is capable of replacing standard small

signal MOSFETs while providing at least a 60%

reduction in footprint size.

.

1.00 mm

0.36 mm

0.60 mm

Figure 3-1. Typical Part Dimensions

.

.

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

–20

V

Qg

Gate Charge Total (–4.5 V)

913

pC

Qgd

Gate Charge Gate-to-Drain

153

pC

RDS(on)

Drain-to-Source

On-Resistance

VGS = –1.8 V

395

mΩ

VGS = –2.5 V

145

mΩ

VGS = –4.5 V

90

mΩ

VGS(th)

Threshold Voltage

–0.95

V

Ordering Information

Device(1)

Qty

Media

Package

Ship

CSD25481F4

3000

7-Inch

Reel

Femto(0402)

1.0 mm × 0.6 mm

Land Grid Array (LGA)

Tape and

Reel

CSD25481F4T

250

7-Inch

Reel

(1)

For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C unless otherwise stated

VALUE

UNIT

VDS

Drain-to-Source Voltage

–20

V

VGS

Gate-to-Source Voltage

–12

V

ID

Continuous Drain Current(1)

–2.5

A

IDM

Pulsed Drain Current(2)

–13.1

A

IG

Continuous Gate Clamp Current

–35

mA

Pulsed Gate Clamp Current(2)

–350

PD

Power Dissipation(1)

500

mW

V(ESD)

Human Body Model (HBM)

4

kV

Charged Device Model (CDM)

2

kV

TJ,

Tstg

Operating Junction and

Storage Temperature Range

–55 to 150

°C

(1)

Typical RθJA = 90°C/W on 1 inch2 (6.45 cm2), 2 oz.

(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4

PCB.

(2)

Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

D

G

S

Figure 3-2. Top View

CSD25481F4

SLPS420F – SEPTEMBER 2013 – REVISED FEBRUARY 2022

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.