5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, IDS = –250 μA

–20

V

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = –16 V

–100

nA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = –12 V

–50

nA

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, IDS = –250 μA

–0.7

–0.95

–1.2

V

RDS(on)

Drain-to-Source On-Resistance

VGS = –1.8 V, IDS = –0.1 A

395

800

mΩ

VGS = –2.5 V, IDS = –0.5 A

145

174

mΩ

VGS = –4.5 V, IDS = –0.5 A

90

105

mΩ

VGS = –8 V, IDS = –0.5 A

75

88

mΩ

gfs

Transconductance

VDS = –10 V, IDS = –0.5 A

3.3

S

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0 V, VDS = –10 V,

ƒ = 1 MHz

189

pF

Coss

Output Capacitance

78

pF

Crss

Reverse Transfer Capacitance

5.5

pF

RG

Series Gate Resistance

20

Ω

Qg

Gate Charge Total (4.5 V)

VDS = –10 V, IDS = –0.5 A

913

pC

Qgd

Gate Charge Gate-to-Drain

153

pC

Qgs

Gate Charge Gate-to-Source

240

pC

Qg(th)

Gate Charge at Vth

116

pC

Qoss

Output Charge

VDS = –10 V, VGS = 0 V

1030

pC

td(on)

Turn On Delay Time

VDS = –10 V, VGS = –4.5 V,

IDS = –0.5 A,RG = 2 Ω

4.1

ns

tr

Rise Time

3.6

ns

td(off)

Turn Off Delay Time

16.9

ns

tf

Fall Time

6.7

ns

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = –0.5 A, VGS = 0 V

–0.75

V

Qrr

Reverse Recovery Charge

VDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs

1010

pC

trr

Reverse Recovery Time

7.5

ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

TYPICAL VALUES

UNIT

RθJA

Junction-to-Ambient Thermal Resistance(1)

90

°C/W

Junction-to-Ambient Thermal Resistance(2)

250

(1)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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CSD25481F4

SLPS420F – SEPTEMBER 2013 – REVISED FEBRUARY 2022

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