1 Features
• Ultra-low on resistance
• Ultra-low Qg and Qgd
• High operating drain current
• Ultra-small footprint (0402 Case Size)
– 1 mm × 0.6 mm
• Ultra-low profile
– 0.36 mm max height
• Integrated ESD protection diode
– Rated >4 kV HBM
– Rated >2 kV CDM
• Lead and halogen free
• RoHS compliant

2 Applications
• Optimized for load switch applications
• Optimized for general purpose switching
applications
• Battery applications
• Handheld and mobile applications

3 Description
This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET
is designed and optimized to minimize the footprint
in many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.