4

SN74HCS72-Q1

SCLS774 – OCTOBER 2019

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(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

(3)

Guaranteed by design

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VCC

Supply voltage

–0.5

7

V

IIK

Input clamp current(2)

VI < 0 or VI > VCC + 0.5 V

±20

mA

IOK

Output clamp current(2)

VO < 0 or VO > VCC + 0.5

V

±20

mA

IO

Continuous output current

VO = 0 to VCC

±25

mA

Continuous current through VCC or GND

±50

mA

Tj

Junction temperature(3)

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

AEC Q100-002 indicate that HBM stressing shall be in accordrance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per AEC Q100-002(1)

HBM ESD Classification Level 2

±4000

V

Charged device model (CDM), per AEC Q100-

011

CDM ESD Classification Level C4B

±1000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC

Supply voltage

2

5

6

V

VI

Input voltage

0

VCC

V

VO

Output voltage

0

VCC

V

Δt/Δv

Input transition rise and fall rate

Unlimited

ns/V

TA

Ambient temperature

–40

125

°C

6.4 Thermal Information

THERMAL METRIC

SN74HCS72-Q1

UNIT

D (SOIC)

PW (TSSOP)

14 PINS

14 PINS

RθJA

Junction-to-ambient thermal resistance

133.6

151.7

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

89

79.4

°C/W

RθJB

Junction-to-board thermal resistance

89.5

94.7

°C/W

ΨJT

Junction-to-top characterization parameter

45.5

25.2

°C/W

ΨJB

Junction-to-board characterization parameter

89.1

94.1

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W