LMK02002

SNAS418 – AUGUST 2007

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Electrical Characteristics

(1)

(3.15 V

≤ Vcc ≤ 3.45 V, -40 °C ≤ TA ≤ 85 °C, Differential Inputs/Outputs; except as specified. Typical values represent most

likely parametric norms at Vcc = 3.3 V, TA = 25 °C, and at the Recommended Operation Conditions at the time of product

characterization and are not specified).

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Current Consumption

Entire device; CLKout0 & CLKout3

159

enabled in Bypass Mode

ICC

Power Supply Current (2)

mA

Entire device; All Outputs Off (no

70

emitter resistors placed)

ICCPD

Power Down Current

POWERDOWN = 1

1

mA

Reference Oscillator

Reference Oscillator Input Frequency

fOSCin square

1

200

MHz

Range for Square Wave

AC coupled; Differential (VOD)

Square Wave Input Voltage for OSCin and

VOSCinsquare

0.2

1.6

Vpp

OSCin*

Frequency Input

fFin

Frequency Input Frequency Range

1

800

MHz

SLEWFin

Frequency Input Slew Rate

See (3)(4)

0.5

V/ns

DUTYFin

Frequency Input Duty Cycle

40

60

%

PFin

Input Power Range for Fin or Fin*

AC coupled

-13

8

dBm

PLL

fCOMP

Phase Detector Frequency

40

MHz

VCPout = Vcc/2, PLL_CP_GAIN = 1x

100

VCPout = Vcc/2, PLL_CP_GAIN = 4x

400

ISRCECPout

Charge Pump Source Current

µA

VCPout = Vcc/2, PLL_CP_GAIN = 16x

1600

VCPout = Vcc/2, PLL_CP_GAIN = 32x

3200

VCPout = Vcc/2, PLL_CP_GAIN = 1x

-100

VCPout = Vcc/2, PLL_CP_GAIN = 4x

-400

ISINKCPout

Charge Pump Sink Current

μA

VCPout = Vcc/2, PLL_CP_GAIN = 16x

-1600

VCPout = Vcc/2, PLL_CP_GAIN = 32x

-3200

ICPoutTRI

Charge Pump TRI-STATE Current

0.5 V < VCPout < Vcc - 0.5 V

2

10

nA

Magnitude of Charge Pump

VCPout = Vcc / 2

ICPout%MIS

3

%

Sink vs. Source Current Mismatch

TA = 25°C

Magnitude of Charge Pump

0.5 V < VCPout < Vcc - 0.5 V

ICPoutVTUNE

4

%

Current vs. Charge Pump Voltage Variation

TA = 25°C

Magnitude of Charge Pump Current vs.

ICPoutTEMP

4

%

Temperature Variation

PLL_CP_GAIN = 1x

-117

PLL 1/f Noise at 10 kHz Offset (5)

PN10kHz

dBc/Hz

Normalized to 1 GHz Output Frequency

PLL_CP_GAIN = 32x

-122

(1)

The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as

otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and

are not ensured.

(2)

See CURRENT CONSUMPTION / POWER DISSIPATION CALCULATIONS for more current consumption / power dissipation

calculation information.

(3)

For all frequencies the slew rate, SLEWFin, is measured between 20% and 80%.

(4)

Specification is ensured by characterization and is not tested in production.

(5)

A specification in modeling PLL in-band phase noise is the 1/f flicker noise, LPLL_flicker(f), which is dominant close to the carrier. Flicker

noise has a 10 dB/decade slope. PN10kHz is normalized to a 10 kHz offset and a 1 GHz carrier frequency. PN10kHz = LPLL_flicker(10

kHz) - 20log(Fout / 1 GHz), where LPLL_flicker(f) is the single side band phase noise of only the flicker noise's contribution to total noise,

L(f). To measure LPLL_flicker(f) it is important to be on the 10 dB/decade slope close to the carrier. A high phase detector frequency and a

clean crystal are important to isolating this noise source from the total phase noise, L(f). LPLL_flicker(f) can be masked by the reference

oscillator performance if a low power or noisy source is used. The total PLL inband phase noise performance is the sum of LPLL_flicker(f)

and LPLL_flat(f).

4

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