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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S29GL01GS датащи(PDF) 4 Page - Cypress Semiconductor |
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S29GL01GS датащи(HTML) 4 Page - Cypress Semiconductor |
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4 / 108 page  Document Number: 001-98285 Rev. *R Page 4 of 108 S29GL01GS/S29GL512S S29GL256S/S29GL128S 1. Product Overview The GL-S family consists of 128-Mbit to 1Gbit, 3.0 V core, Versatile I/O, non-volatile, flash memory devices. These devices have a 16-bit (word) wide data bus and use only word boundary addresses. All read accesses provide 16 bits of data on each bus transfer cycle. All writes take 16 bits of data from each bus transfer cycle. Figure 1.1 Block Diagram : Note: ** AMAX GL01GS = A25, AMAX GL512S = A24, AMAX GL256S = A23, AMAX GL128S = A22 The GL-S family combines the best features of eXecute In Place (XIP) and Data Storage flash memories. This family has the fast random access of XIP flash along with the high density and fast program speed of Data Storage flash. Read access to any random location takes 90 ns to 120 ns depending on device density and I/O power supply voltage. Each random (initial) access reads an entire 32-byte aligned group of data called a Page. Other words within the same Page may be read by changing only the low order 4 bits of word address. Each access within the same Page takes 15 ns to 30 ns. This is called Page Mode read. Changing any of the higher word address bits will select a different Page and begin a new initial access. All read accesses are asynchronous. Input/Output Buffers X-Decoder Y-Decoder Chip Enable Output Enable Logic Erase Voltage Generator PGM Voltage Generator Timer VCC Detector State Control Command Register VCC VSS V IO WE# WP# CE# OE# STB STB DQ15–DQ0 Sector Switches RY/BY# RESET# Data Latch Y-Gating Cell Matrix AMax**–A0 |
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