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TC9328AF датащи(PDF) 19 Page - Toshiba Semiconductor |
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TC9328AF датащи(HTML) 19 Page - Toshiba Semiconductor |
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19 / 84 page ![]() TC9328AF 2004-09-13 19 Machine Language (16 bits) Instruc -tion Group Mnemonic Skip Function Function Description Operation Description IC (6 bits) A (2 bits) B (4 bits) C (4 bits) LD r, M* Load memory to general register r ← (M*) 0101 DR* (4 bits) DC RN ST M*, r Store memory to general register M* ← (r) 0110 DR* (4 bits) DC RN MVSR M1, M2 Move memory to memory in same row (DR, DC1) ← (DR, DC2) 001111 DR DC1 DC2 MVIM M, I Move immediate data to memory M ← I 000111 DR DC I MVGD r, M Move memory to destination memory referring to G-register and general register [(G), (r)] ← (M) 011110 DR DC RN MVGS M, r Move source memory referring to G-register and general register to memory (Note) (M) ← [(G), (r)] 011111 DR DC RN STIG I* Move immediate data to G-register G ← I* 111111 I* 0010 IN1 M, C Input IN1 port data to memory M ← [IN1] C 111000 DR DC CN OUT1 M, C Output contents of memory to OUT1 port [OUT1] C ← (M) 111011 DR DC CN IN2 M, C Input IN2 port data to memory M ← [IN2] C 111001 DR DC CN OUT2 M, C Output contents of memory to OUT2 port [OUT2] C ← (M) 111100 DR DC CN IN3 M, C Input IN3 port data to memory M ← [IN3] C 111010 DR DC CN OUT3 M, C Output contents of memory to OUT3 port [OUT3] C ← (M) 111101 DR DC CN ORR r, M Logical OR of general register and memory r ← (r) ∨ (M) 001100 DR DC RN ANDR r, M Logical AND of general register and memory r ← (r) ∧ (M) 001101 DR DC RN ORIM M, I Logical OR of memory and immediate data M ← (M) ∨ I 000100 DR DC I ANIM M, I Logical AND of memory and immediate data M ← (M) ∧ I 000101 DR DC I XORIM M, I Logical exclusive OR of memory and immediate data M ← (M) ∀ I 000110 DR DC I XORR r, M Logical exclusive OR of general register and memory r ← (r) ∀ (M) 001110 DR DC RN Note: The execution period for the MVGS instruction is two machine cycles. |
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