Data Sheet

ADBMS6821/ADBMS6822

SPECIFICATIONS

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Rev. B | 4 of 28

POWER-SUPPLY SPECIFICATIONS

Operating junction temperature (TJ) = −40°C to +125°C, VDDS = 3 V, VDD = VP = 5 V, unless otherwise noted.

Table 1. Power-Supply Specifications

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

OPERATING RANGE

VDD

VDD

3.0

5.5

V

VDDS

VDDS

1.7

5.5

V

VP

VP

LPCM mode, VDD = 0 V

6

30

V

All other modes

3

30

V

SUPPLY CURRENT

VDD

IVDD(IDLE)

Idle state, VDD = 5 V

7

12

µA

IVDD(RDY)

Ready state, VDD = 5 V, not LPCM mode

2.4

3

mA

IVDD(RDY_LPCM)

Ready state, VDD = 5 V, LPCM mode

1.5

2

mA

IVDD(ACT)

Active state, SCK frequency (fSCK) = 2 MHz, VDD = 5 V

7.0

12

mA

VP

IVP(NOM)

VDD = 5 V, VP = 12 V

0.4

2

µA

IVP(LSTN)

VDD = 0 V, VP = 12 V, listen state, LPCM mode

7

16

µA

IVP(RDY_LPCM)

VDD = 0 V, VP = 12 V, ready state, LPCM mode

1.4

2

mA

VDD + VP

IVDD/VP(IDLE)

VDD = VP = 5 V, idle state

7

13

µA

IVDD/VP(LSTN)

LPCM mode, VDD = VP = 5 V, listen state

10

17

µA

IVDD/VP(RDY_LPCM)

LPCM mode, VDD = VP = 5 V, ready state

1.5

2

mA

VDDS

IVDDS(IDLE_LSTN)

Idle or listen state, VDDS = 5 V

0.5

4

µA

IVDDS(RDY_ACT)

Ready or active state, VDDS = 5 V

45

70

µA

LPCM TIMEOUT SPECIFICATIONS

TJ = −40°C to +125°C, VDDS = 3 V, VDD = VP = 5 V, unless otherwise noted.

Table 2. LPCM Timeout Specifications

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

RTO PIN TO GND RESISTANCE

RRTO

1.5 sec typical timeout

0

0

10

kΩ

1.5 sec typical timeout

92

100

kΩ

3 sec typical timeout

15

17.8

22

kΩ

6 sec typical timeout

28

30.9

34

kΩ

12 sec typical timeout

41

43.2

46

kΩ

18 sec typical timeout

54

56.2

58

kΩ

24 sec typical timeout

67

68.1

71

kΩ

48 sec typical timeout

79

80.6

83

kΩ

LPCM TIMEOUT

tLPCM

Relative error to typical timeout

−10

+10

%