UCC28070 datasheet(6/27 Pages) TI

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DEVICE INFORMATION

GDB

CAOB

GND

VCC

GDA

DMAX

VAO

RDM

PKLMT

RSYNTH

CSA

VSENSE

VINAC

IMO

CDR

CSB

VREF

CAOA

UCC28070

SLUS794 – NOVEMBER 2007

ELECTRICAL CHARACTERISTICS (continued)

over operating free-air temperature range

−40

°C < T

A < 125°C, TJ = TA, VCC = 12 V, GND = 0 V, RRT = 75 kΩ, RDMX = 67.5

Ω, RRDM = RSYN = 100 kΩ, RIMO = 16 kΩ, CCDR = 625 pF, CSS = CVREF = 0.1 µF, CVCC = 1 µF, (unless otherwise noted)

SYMBOL

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Current Synthesizer

VSENSE = 3 V, VINAC = 0 V

VRSYNTH

Regulation voltage

VSENSE = 3 V, VINAC = 2.85 V

0.15

Synthesizer disable threshold

Measured at RSYNTH (rising)

TBD

VINAC input bias current

250

TBD

Peak Current Limit

Peak current limit threshold

PKLMT = 3.30 V, measured at CSx (rising)

3.27

3.3

3.33

Measured between CSx (rising) and GDx

Peak current limit propagation delay

TBD

100

(falling) edges

PWM Ramp

VRMP

PWM ramp amplitude

PWM ramp offset voltage

TA = 25°C, RRT = 75 kΩ

TBD

0.7

TBD

PWM ramp offset temperature

−2

mV/

°C

coefficient

In-Rush Current Detection

In-rush detection threshold

Measured as VSENSE - VINAC

In-rush detection hyst.

Gate Drive

GDA, GDB output voltage, high,

VCC = 20 V, CLOAD = 1 nF

11.5

clamped

GDA, GDB output voltage, High

CLOAD = 1 nF

10.5

11.5

GDA, GDB output voltage, Low

CLOAD = 1 nF

0.2

0.3

Rise time GDx

1 V to 9 V, CLOAD = 1 nF

Fall time GDx

9 V to 1 V, CLOAD = 1 nF

GDA, GDB output voltage, UVLO

VCC = 0 V, IGDA, IGDB = 2.5 mA

1.6

Thermal Shutdown

Thermal shutdown threshold

160

°C

Thermal shutdown recovery

140

TSSOP-20 Top View, PW Package

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