Monolithic Transistor Array – SiS3045

 

Dynamic Electrical Characteristics T

A = 25°C unless otherwise stated

Rev 1.1

20/10/17

PARAMETER

SYMBOL

TEST

CONDITIONS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MIN

TYP

MAX

UNITS

Low Frequency Noise Figure

(Figure 9)

NF

f = 1 kHz, VCE = 3V

IC = 100μA, Source

Resistance = 1kΩ

-

3.25

-

dB

Low Frequency, Small Signal Equivalent Circuit Characteristics

Forward Current Transfer Ratio

f = 1 kHz

VCE = 3V, IC = 1mA

hFE

(Figure 11)

-

110

-

-

Short Circuit Input Impedance

(Figure 11)

hIE

f = 1 kHz

VCE = 3V, IC = 1mA

-

3.5

-

kΩ

Open Circuit Output Impedance

(Figure 11)

hOE

f = 1 kHz

-

VCE = 3V, IC = 1mA

15.6

-

µmho

Open Circuit Reverse Voltage

Transfer Ratio (Figure 11)

hRE

f = 1 kHz

VCE = 3V, IC = 1mA

-

1.8 x 10

-4

-

-

Admittance Characteristics

Forward Transfer Admittance

(Figure 12)

YFE

f = 1 kHz

VCE = 3V, IC = 1mA

-

31 - j1.5

-

-

Input Admittance (Figure 13)

YIE

f = 1 kHz

VCE = 3V, IC = 1mA

-

0.3 + j0.04

-

-

Output Admittance (Figure 14)

YOE

f = 1 kHz

VCE = 3V, IC = 1mA

-

0.001+j0.03

-

-

Reverse Transfer Admittance

(Figure 15)

YRE

f = 1 kHz

VCE = 3V, IC = 1mA

-

Fig 14

-

-

Gain Bandwidth Product (Figure 16)

fT

VCE = 3V, IC = 1mA

300

550

-

MHz

Emitter-to-Base Capacitance

CEB

VEB = 3V, IE = 0

-

0.6

-

pF

Collector-to-Base Capacitance

CCB

VCB = 3V, IC = 0

-

0.58

-

pF

Collector-to-Substrate Capacitance

CCI

VCS = 3V, IC = 0

-

2.8

-

pF

FIGURE 1. Typical Base-To-Collector Current

vs Temperature (each transistor)

Typical Performance Characteristics

FIGURE 2. Typical Collector-To-Emitter Cutoff

Current vs Temperature (each transistor)

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