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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HT46R46E датащи(PDF) 6 Page - Holtek Semiconductor Inc |
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HT46R46E датащи(HTML) 6 Page - Holtek Semiconductor Inc |
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6 / 73 page  Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VIH2 Input High Voltage (RES) ¾¾ 0.9VDD ¾ VDD V VLVR Low Voltage Reset ¾¾ 2.7 3.0 3.3 V IOL I/O Port Sink Current 3V VOL=0.1VDD 48 ¾ mA 5V VOL=0.1VDD 10 20 ¾ mA IOH I/O Port Source Current 3V VOH=0.9VDD -2 -4 ¾ mA 5V VOH=0.9VDD -5 -10 ¾ mA RPH Pull-high Resistance 3V ¾ 20 60 100 k W 5V ¾ 10 30 50 k W VAD A/D Input Voltage ¾¾ 0 ¾ VDD V EAD A/D Conversion Error ¾¾ ¾ ±0.5 ±1 LSB IADC Additional Power Consumption if A/D Converter is Used 3V ¾ ¾ 0.5 1 mA 5V ¾ 1.5 3 mA EEPROM - D.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD Operating Voltage ¾¾ 2.2 ¾ 5.5 V ICC1 Operating Current 5V Read at 100kHz ¾¾ 2mA ICC2 Operating Current 5V Write at 100kHz ¾¾ 5mA VIL Input Low Voltage ¾¾ -1 ¾ 0.3VDD V VIH Input High Voltage ¾¾ 0.7VDD ¾ VDD+0.5 V VOL Output Low Voltage 2.4V IOL=2.1mA ¾¾ 0.4 V ILI Input Leakage Current 5V VIN=0 or VDD ¾¾ 1 mA ILO Output Leakage Current 5V VOUT=0 or VDD ¾¾ 1 mA ISTB1 Standby Current 5V VIN=0 or VDD ¾¾ 4 mA ISTB2 Standby Current 2.4V VIN=0 or VDD ¾¾ 3 mA CIN Input Capacitance (See Note) ¾ f=1MHz 25°C ¾¾ 6pF COUT Output Capacitance (See Note) ¾ f=1MHz 25°C ¾¾ 8pF A.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions fSYS System Clock ¾ 2.2V~5.5V 400 ¾ 4000 kHz ¾ 3.3V~5.5V 400 ¾ 8000 kHz fTIMER Timer I/P Frequency (TMR) ¾ 2.2V~5.5V 0 ¾ 4000 kHz ¾ 3.3V~5.5V 0 ¾ 8000 kHz tWDTOSC Watchdog Oscillator Period 3V ¾ 45 90 180 ms 5V ¾ 32 65 130 ms tWDT1 Watchdog Time-out Period (RC) ¾¾ 2 15 ¾ 2 16 tWDTOSC tWDT2 Watchdog Time-out Period (System Clock) ¾¾ 2 17 ¾ 2 18 tSYS HT46R46E/C46E/R47E/C47E/R48AE/C48AE/R49E Rev. 1.20 6 August 15, 2007 |
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