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SST29SF040 датащи(PDF) 9 Page - Silicon Storage Technology, Inc

номер детали SST29SF040
подробное описание детали  4 Mbit (x8) Small-Sector Flash
PDF  22 Pages
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производитель  SST [Silicon Storage Technology, Inc]
домашняя страница  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST29SF040 датащи(HTML) 9 Page - Silicon Storage Technology, Inc

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Data Sheet
4 Mbit Small-Sector Flash
SST29SF040 / SST29VF040
9
©2004 Silicon Storage Technology, Inc.
S71160-10-000
2/04
AC CHARACTERISTICS
TABLE 10: READ CYCLE TIMING PARAMETERS
VDD = 4.5-5.5V FOR SST29SF040 AND 2.7-3.6V FOR SST29VF040
Symbol
Parameter
SST29SF/VF040-55
SST29VF040-70
Units
Min
Max
Min
Max
TRC
Read Cycle Time
55
70
ns
TCE
Chip Enable Access Time
55
70
ns
TAA
Address Access Time
55
70
ns
TOE
Output Enable Access Time
30
35
ns
TCLZ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
20
25
ns
TOHZ1
OE# High to High-Z Output
20
25
ns
TOH1
Output Hold from Address Change
00
ns
T10.9 1160
TABLE 11: PROGRAM/ERASE CYCLE TIMING PARAMETERS
VDD = 4.5-5.5V FOR SST29SF040 AND 2.7-3.6V FOR SST29VF040
Symbol
Parameter
Min
Max
Units
TBP
Byte-Program Time
20
µs
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
ns
TCP
CE# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
TWPH1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
WE# Pulse Width High
30
ns
TCPH1
CE# Pulse Width High
30
ns
TDS
Data Setup Time
40
ns
TDH1
Data Hold Time
0
ns
TIDA1
Software ID Access and Exit Time
150
ns
TSE
Sector-Erase
25
ms
TSCE
Chip-Erase
100
ms
T11.8 1160



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