 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
SST29SF040 датащи(PDF) 8 Page - Silicon Storage Technology, Inc |
|
|
|||||||||||||||||||||||||||||
SST29SF040 датащи(HTML) 8 Page - Silicon Storage Technology, Inc |
|
|
8 / 22 page  8 Data Sheet 4 Mbit Small-Sector Flash SST29SF040 / SST29VF040 ©2004 Silicon Storage Technology, Inc. S71160-10-000 2/04 TABLE 6: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V FOR SST29VF040 Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input=VILT/VIHT, at f=5 MHz, VDD=VDD Max Read 25 mA CE#=VIL, OE#=WE#=VIH, all I/Os open Program and Erase 30 mA CE#=WE#=VIL, OE#=VIH ISB Standby VDD Current 15 µA CE#=VIHC, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VIH Input High Voltage 0.7VDD VVDD=VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min T6.8 1160 TABLE 7: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Program/Erase Operation 100 µs T7.1 1160 TABLE 8: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T8.1 1160 TABLE 9: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T9.2 1160 |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
