IRG4BC20FD-SPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

E

G

n-channel

C

Fast CoPack IGBT

11/19/04

Absolute Maximum Ratings

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching,

>20

kHz in resonant mode).

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

ultra-soft-recovery anti-parallel diodes for use

in bridge configurations

•

Lead-Free

Benefits

• Generation 4 IGBTs offer highest efficiencies

available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

2

D Pak

www.irf.com

1

PD -95965

Parameter

Max.

Units

Collector-to-Emitter Voltage

600

V

Continuous Collector Current

16

Continuous Collector Current

9.0

Pulsed Collector Current



64

A

Clamped Inductive Load Current

‚

64

Diode Continuous Forward Current

8.0

Diode Maximum Forward Current

60

Gate-to-Emitter Voltage

± 20

V

Maximum Power Dissipation

60

Maximum Power Dissipation

24

Operating Junction and

-55 to +150

Storage Temperature Range

°C

Parameter

Typ.

Max.

Units

Junction-to-Case - IGBT

–––

2.1

Junction-to-Case - Diode

–––

3.5

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)*

–––

80

Wt

Weight

1.44

–––

g (oz)

Thermal Resistance

W

* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques

refer to application note #AN-994.