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IRG4BC20FD-SPBF датащи(PDF) 5 Page - International Rectifier

номер детали IRG4BC20FD-SPBF
подробное описание детали  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT
PDF  12 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRG4BC20FD-SPBF датащи(HTML) 5 Page - International Rectifier

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IRG4BC20FD-SPbF
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5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0
10
20
30
40
50
0.78
0.80
0.82
0.84
0.86
0.88
0.90
R
, Gate Resistance (Ohm)
G
V
= 480V
V
= 15V
T
= 25 C
I
= 9.0A
CC
GE
J
C
°
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
J
°
R
= 50Ohm
V
= 15V
V
= 480V
G
GE
CC
I =
A
18
C
I =
A
9
C
I =
A
4.5
C
Ω
Ω
0
5
10
15
20
25
30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
V
= 400V
I
= 9.0A
CC
C
1
10
100
0
200
400
600
800
1000
V
, Collector-to-Emitter Voltage (V)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
9.0 A



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