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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRG4BC20FD-SPBF датащи(PDF) 2 Page - International Rectifier |
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IRG4BC20FD-SPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRG4BC20FD-SPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 27 40 IC = 9.0A Qge Gate - Emitter Charge (turn-on) — 4.2 6.2 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 9.9 15 VGE = 15V td(on) Turn-On Delay Time — 43 — TJ = 25°C tr Rise Time — 20 — ns IC = 9.0A, VCC = 480V td(off) Turn-Off Delay Time — 240 360 VGE = 15V, RG = 50Ω tf Fall Time — 150 220 Energy losses include "tail" and Eon Turn-On Switching Loss — 0.25 — diode reverse recovery. Eoff Turn-Off Switching Loss — 0.64 — mJ See Fig. 9, 10, 18 Ets Total Switching Loss — 0.89 1.3 td(on) Turn-On Delay Time — 41 — TJ = 150°C, See Fig. 10, 11, 18 tr Rise Time — 22 — ns IC = 9.0A, VCC = 480V td(off) Turn-Off Delay Time — 320 — VGE = 15V, RG = 50Ω tf Fall Time — 290 — Energy losses include "tail" and Ets Total Switching Loss — 1.35 — mJ diode reverse recovery. LE Internal Emitter Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 540 — VGE = 0V Coes Output Capacitance — 37 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 7.0 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig. —55 90 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig. — 4.5 8.0 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig. — 124 360 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig. During tb — 210 — TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.72 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 1.66 2.0 IC = 9.0A VGE = 15V — 2.06 — V IC = 16A See Fig. 2, 5 — 1.76 — IC = 9.0A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 2.9 5.1 — S VCE = 100V, IC = 9.0A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 1700 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13 — 1.3 1.6 IC = 8.0A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
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