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405EX датащи(PDF) 61 Page - Applied Micro Circuits Corporation |
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405EX датащи(HTML) 61 Page - Applied Micro Circuits Corporation |
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61 / 67 page ![]() PPC405EX – PowerPC 405EX Embedded Processor Revision 1.09 - August 21, 2007 AMCC Proprietary 61 Preliminary Data Sheet DDR SDRAM Read Operation The Read of the incoming Data from the SDRAM is done on the rising and falling edges of the differential DQS signal. The Data must be centered to these edges for correct operation. The PPC405EX can delay with very fine granularity the DQS through register programming. DDR SDRAM MemClkOut0 and Read Clock Delay In order to accommodate timing variations introduced by the system designs using this chip, the three-stage data path shown below is used to eliminate metastability and allow data sampling to be adjusted for minimum latency. The data is stored in the eight Flip Flops of the Stage 1, such that it can be transferred later within a 8x period. Table 22. I/O Timing—DDR SDRAM TSK, TSA, and THA Signal Name TSK (ns) TSA (ns) THA (ns) MinimumMaximumMinimum Minimum MemAddr00:14 0.20 0.20 +2.3 +2.3 BA0:2 BankSel0:1 MemClkEn CAS RAS WE Table 23. I/O Timing—DDR SDRAM Write TimingTSD and THD Notes: 1. TSD and THD are measured under worst case conditions. 2. Clock speed for the values in the table is 200MHz. 3. The time values in the table include 1/4 of a cycle at 200MHz (5ns x 0.25 = 1.25 ns). 4. To obtain adjusted TSD and THD values for lower clock frequencies, subtract 1.5 ns from the values in the table and add 1/4 of the cycle time for the lower clock frequency (for example, TSD − 1.25 + 0.25TCYC). Signal Names Reference Signal TSD (ns) THD (ns) MemData00:07, DM0 DQS0 0.84 1.15 MemData08:15, DM1 DQS1 0.84 1.15 MemData16:23, DM2 DQS2 0.84 1.15 MemData24:31, DM3 DQS3 0.84 1.15 ECC0:7, DM4 DQS4 0.84 1.15 |
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