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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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C8051F360 датащи(PDF) 32 Page - Silicon Laboratories |
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C8051F360 датащи(HTML) 32 Page - Silicon Laboratories |
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32 / 288 page  C8051F360/1/2/3/4/5/6/7/8/9 32 Rev. 1.0 2. Absolute Maximum Ratings Table 2.1. Absolute Maximum Ratings Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the devices at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Parameter Conditions Min Typ Max Units Ambient temperature under bias –55 — 125 °C Storage Temperature –65 — 150 °C Voltage on any Port I/O Pin or RST with respect to GND –0.3 — 5.8 V Voltage on VDD with respect to GND –0.3 — 4.2 V Maximum Total current through VDD or GND — — 500 mA Maximum output current sunk by RST or any Port pin —— 100 mA |
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