5 Specifications

5.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

Voltage

Input, VIN

–0.3

6

V

Enable, VEN

–0.3

6

Output, VOUT

–0.3

5.5

VNR, VFB

–0.3

6

Current

Maximum output, IOUT

Internally limited

Output short-circuit duration

Indefinite

Continuous total power

dissipation

PDISS

See Thermal Information

Temperature

Operating junction, TJ

–55

150

°C

Storage, Tstg

–65

150

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

5.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101, all pins(2)

±500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Input supply voltage

1.7

5.5

V

IOUT

Output current

0

250

mA

TJ

Operating junction temperature

–40

125

°C

5.4 Thermal Information

THERMAL METRIC(1)

TPS732 M3 new silicon

UNIT

DRB (VSON)

DCQ (SOT-223)

8 PINS

6 PINS

RθJA

Junction-to-ambient thermal resistance

47.7

76

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

68.9

46.6

°C/W

RθJB

Junction-to-board thermal resistance

20.6

18.1

°C/W

ψJT

Junction-to-top characterization parameter

3.4

8.6

°C/W

ψJB

Junction-to-board characterization parameter

20.6

17.6

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

3.5

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

note.

TPS732

SBVS037Q – AUGUST 2003 – REVISED SEPTEMBER 2024

www.ti.com

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