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M65KA512AB датащи(PDF) 12 Page - STMicroelectronics

номер детали M65KA512AB
подробное описание детали  512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM
PDF  55 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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M65KA512AB датащи(HTML) 12 Page - STMicroelectronics

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Operations
M65KA512AB
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3
Operations
There are 7 operating modes that control the memory. Each of these is described in this
section, see Table 2: Operating mode, for a summary.
3.1
Power-Up
The Low-Power SDRAM has to be powered up and initialized in a well determined manner.
Power must be applied to VDD and VDDQ simultaneously and, at the same time, the clock
signal must be started. After Power-Up, a minimum initial pause of 200µs is required. From
power-up until the Precharge command is issued, the KE and DQM signals must be held
High. The Precharge command must then be issued to all banks, and 2 or more Auto
Refresh cycles must be executed after the precharge is completed and the minimum tRP is
satisfied. Once these cycles are completed, a Mode Register Set command must be issued
to program the specific operation mode (CAS Latency, Burst Length, etc.). After issuing the
Mode Register Set command, the device will not accept any other command for tRSC. After
issuing the Extended Mode Register Set command the device will not accept any other
command for tRSC.
The device is now ready for normal operation.
Refer to Figure 22 for a detailed description of the Power-Up ac waveforms.
3.2
Burst Read
The Read command is used to switch the device to Burst Read mode (see Section 4.5:
Read command for details). In Burst Read mode the data is output in bursts synchronized
with the clock. Burst Read opertions are initiated by driving E and CAS Low, VIL, W and
RAS High, and VIH, at the positive edge of the clock signal, K.
Burst Read can be accompanied by an Auto Precharge cycle depending on the state of the
A10 Address Input. If A10 is High (set to ‘1’) when the Burst Read command is issued, the
Burst Read operation is followed by an Auto Precharge cycle. If A10 is Low (set to ‘0’), the
row will remain active for subsequent accesses.
BA1 and BA0 are used to select the bank, and the A0-A9 address inputs are used to select
the starting column location. The Burst Length, Burst Type, and CAS Latency depend on the
values programmed by issuing a Mode Register Set command (see Section 5.1: Mode
Register description).
After a Burst Read operation is completed, data outputs become High-Z.
Refer to Figure 6, Figure 7, Figure 8, Figure 9, Figure 10, Figure 11 and Figure 12 for a
detailed description of Burst Read ac waveforms.



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