Product Specification

SL1 ICS31 01

Rev. 1.2

July 2000

Page 10 of 22

Public

7 Mechanical Wafer Specifications

For further information as described in the following chapters please refer to the following

Philips documents:

• Dicing Guidelines for Thin Wafers (< 200 µm)

• General Specification for 6” Wafer

In case of doubt or inconsistency with the following chapters the above mentioned specifications

are applicable.

Designation:

each wafer is laser scribed with batch and wafer number

Wafer diameter:

150 mm (6")

± 0.3 mm

Die separation lane width:

80 µm (Scribe line)

Electrical connection of substrate:

VSS

Geometrically complete dies per wafer:

approx. 7400

Orientation of dies relat. to wafer flat:

see attached cluster map

Position of test structures:

see attached cluster map

Wafer layout:

see attached cluster map

Batch size:

24 wafers

Process:

6C15 IDFW

7.1 Wafer Status

• Tested, unsawn

• Tested, sawn on FFC

Minimum yield per lot:

30 %

7.2 Backside Treatment

Wafers can be delivered with a thickness of 525 µm (untreated) or with 150

µm ± 15 µm (approx.

6 mil) and have a ground and etched backside.