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LT1374CS8 датащи(PDF) 15 Page - Linear Technology |
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LT1374CS8 датащи(HTML) 15 Page - Linear Technology |
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15 / 32 page ![]() 15 LT1374 1374fb APPLICATIONS INFORMATION Threshold voltage for lockout is about 2.38V, slightly less than the internal 2.42V reference voltage. A 3.5 µA bias current flows out of the pin at threshold. This internally generated current is used to force a default high state on the shutdown pin if the pin is left open. When low shut- down current is not an issue, the error due to this current can be minimized by making RLO 10k or less. If shutdown current is an issue, RLO can be raised to 100k, but the error due to initial bias current and changes with temperature should be considered. Rk R RV V VR A LO HI LO IN LO = () = − () − () 10 238 238 3 5 to 100k 25k suggested . .. µ VIN = Minimum input voltage Keep the connections from the resistors to the shutdown pin short and make sure that interplane or surface capaci- tance to the switching nodes are minimized. If high resistor values are used, the shutdown pin should be bypassed with a 1000pF capacitor to prevent coupling problems from the switch node. If hysteresis is desired in the undervoltage lockout point, a resistor RFB can be added to the output node. Resistor values can be calcu- lated from: R RV V V V RA RR V V HI LO IN OUT FB HI OUT = −+ ()+ [] − () = ()( ) 238 1 238 2 35 ./ .. / ∆∆ ∆ µ 25k suggested for RLO VIN = Input voltage at which switching stops as input voltage descends to trip level ∆V = Hysteresis in input voltage level Example: output voltage is 5V, switching is to stop if input voltage drops below 12V and should not restart unless input rises back to 13.5V. ∆V is therefore 1.5V and VIN = 12V. Let RLO = 25k. R k kA k k Rk k HI FB = −+ ()+ [] − () = () = = ()= 25 12 2 38 1 5 5 1 1 5 238 25 3 5 25 10 41 229 114 114 5 1 5 380 .. / . .. . . /. µ SWITCH NODE CONSIDERATIONS For maximum efficiency, switch rise and fall times are made as short as possible. To prevent radiation and high frequency resonance problems, proper layout of the com- ponents connected to the switch node is essential. B field (magnetic) radiation is minimized by keeping catch diode, switch pin, and input bypass capacitor leads as short as possible. E field radiation is kept low by minimizing the length and area of all traces connected to the switch pin and BOOST pin. A ground plane should always be used under the switcher circuitry to prevent interplane cou- pling. A suggested layout for the critical components is shown in Figure 5. Note that the feedback resistors and compensation components are kept as far as possible from the switch node. Also note that the high current ground path of the catch diode and input capacitor are kept very short and separate from the analog ground line. The high speed switching current path is shown schemati- cally in Figure 6. Minimum lead length in this path is essential to ensure clean switching and low EMI. The path including the switch, catch diode, and input capacitor is the only one containing nanosecond rise and fall times. If you follow this path on the PC layout, you will see that it is irreducibly short. If you move the diode or input capacitor away from the LT1374, get your resumé in order. The other paths contain only some combination of DC and 500kHz triwave, so are much less critical. |
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