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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ST10F276 датащи(PDF) 202 Page - STMicroelectronics |
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ST10F276 датащи(HTML) 202 Page - STMicroelectronics |
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202 / 229 page  Electrical characteristics ST10F276 202/229 Figure 54. Crystal oscillator and resonator connection diagram The given values of CA do not include the stray capacitance of the package and of the printed circuit board: The negative resistance values are calculated assuming additional 5pF to the values in the table. The crystal shunt capacitance (C0), the package and the stray capacitance between XTAL1 and XTAL2 pins is globally assumed equal to 4pF. The external resistance between XTAL1 and XTAL2 is not necessary, since already present on the silicon. 23.8.14 32 kHz Oscillator specifications Conditions: VDD = 5V ±10%, TA = –40 / +125°C Table 99. Negative resistance (absolute min. value @125oC / VDD = 4.5V) CA (pF) 12 15 18 22 27 33 39 47 4 MHz 460 Ω 550 Ω 675 Ω 800 Ω 840 Ω 1000 Ω 1180 Ω 1200 Ω 8 MHz 380 Ω 460 Ω 540 Ω 640 Ω 580 Ω -- - 12 MHz 370 Ω 420 Ω 360 Ω -- -- - CA CA Crystal Resonator ST10F276 ST10F276 Table 100. 32 kHz Oscillator specifications Symbol Parameter Conditions Value Unit Min. Typ. Max. gm32 Oscillator (1) 1. At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started, the current biasing is reduced to lower the power consumption of the system. Start-up 20 31 50 µA/V Normal run 8 17 30 VOSC32 Oscillation amplitude (2)) 2. Not 100% tested, guaranteed by design characterization. Peak to peak 0.5 1.0 2.4 V VAV32 Oscillation voltage level (2) Sine wave middle 0.7 0.9 1.2 tSTUP32 Oscillator start-up time(2) Stable VDD –15 s |
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