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ST10F276 датащи(PDF) 28 Page - STMicroelectronics |
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ST10F276 датащи(HTML) 28 Page - STMicroelectronics |
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28 / 229 page ![]() Internal Flash memory ST10F276 28/229 Bank, or from the other module or again from another memory (internal RAM or external memory). Note: During a Write operation, when bit LOCK of FCR0 is set, it is forbidden to write into the Flash Control Registers. 4.3.1 Power supply drop If during a write operation the internal low voltage supply drops below a certain internal voltage threshold, any write operation running is suddenly interrupted and the modules are reset to Read mode. At following Power-on, an interrupted Flash write operation must be repeated. 4.4 Registers description 4.4.1 Flash control register 0 low The Flash control register 0 low (FCR0L) together with the Flash control register 0 high (FCR0H) is used to enable and to monitor all the write operations for both the Flash modules. The user has no access in write mode to the test-Flash (B0TF). Besides, test- Flash block is seen by the user in Bootstrap mode only. FCR0L (0x0E 0000) FCR Reset value: 0000h 15 14 13 12 11 10 987 65432 10 reserved BSY1 BSY0 LOCK res. BSY3 BSY2 res. RRR RR Table 6. Flash control register 0 low Bit Function BSY(3:2) Bank 3:2 Busy (XFLASH) These bits indicate that a write operation is running on the corresponding Bank of XFLASH. They are automatically set when bit WMS is set. Setting Protection operation sets bit BSY2 (since protection registers are in the Block B2). When these bits are set every read access to the corresponding Bank will output invalid data (software trap 009Bh), while every write access to the Bank will be ignored. At the end of the write operation or during a Program or Erase Suspend these bits are automatically reset and the Bank returns to read mode. After a Program or Erase Resume these bits are automatically set again. |
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