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ST10F276 датащи(PDF) 180 Page - STMicroelectronics |
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ST10F276 датащи(HTML) 180 Page - STMicroelectronics |
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180 / 229 page ![]() Electrical characteristics ST10F276 180/229 |IOV2 | SR Overload current (P2.0) (3) (4)(5) – +5 –1 mA RRST CC RSTIN pull-up resistor 100 k Ω nominal 50 250 k Ω IRWH Read/Write inactive current (6) (7) VOUT = 2.4 V – –40 µA IRWL Read/Write active current (6)(8) VOUT = 0.4V –500 – IALEL ALE inactive current (6) (7) VOUT = 0.4V 20 – IALEH ALE active current (6) (8) VOUT = 2.4 V – 300 IP6H Port 6 inactive current (P6[4:0])(6)(7) VOUT = 2.4 V – –40 IP6L Port 6 active current (P6[4:0])(6) (8) VOUT = 0.4V –500 – IP0H 6) PORT0 configuration current (6) VIN = 2.0V – –10 IP0L 7) VIN = 0.8V –100 – CIO CC Pin capacitance (digital inputs / outputs) (4)(6) –10 pF ICC1 Run mode power supply current(9) (execution from internal RAM) – – 20 + 2 fCPU mA ICC2 Run mode power supply current (4)(10)(execution from internal Flash) –– 20 + 1.8 fCPU mA IID Idle mode supply current (11) –– 20 + 0.6 fCPU mA IPD1 Power Down supply current (12) (RTC off, oscillators off, main voltage regulator off) TA = 25°C – 1 mA IPD2 Power Down supply current (12) (RTC on, main oscillator on, main voltage regulator off) TA = 25°C – 8 mA IPD3 Power down supply current (12) (RTC on, 32 kHz oscillator on, main voltage regulator off) TA = 25°C – 1.1 mA ISB1 Stand-by supply current (12) (RTC off, Oscillators off, VDD off, VSTBY on) VSTBY = 5.5V TA = TJ = 25°C – 250 µA VSTBY = 5.5V TA = TJ = 125°C – 500 µA ISB2 Stand-by supply current (12) (RTC on, 32 kHz Oscillator on, main VDD off, VSTBY on) VSTBY = 5.5V TA = 25°C – 250 µA VSTBY = 5.5V TA = 125°C – 500 µA ISB3 Stand-by supply current (4) (12) (VDD transient condition) –– 2.5 mA Table 90. DC characteristics (continued) Symbol Parameter Test Condition Limit values Unit Min. Max. |
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