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ST10F276 датащи(PDF) 166 Page - STMicroelectronics |
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ST10F276 датащи(HTML) 166 Page - STMicroelectronics |
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166 / 229 page ![]() Register set ST10F276 166/229 Note: All identification words are read-only registers. The values written inside different Identification Register bits are valid only after the Flash initialization phase is completed. When code execution is started from internal memory (pin EA held high during reset), the Flash has completed its initialization, so the bits of Identification Registers are immediately ready to be read out. On the contrary, when code execution is started from external memory (pin EA held low during reset), the Flash initialization is not yet completed, so the bits of Identification Registers are not ready. The user can poll bits 15 and 14 of IDMEM register: When both bits are read low, the Flash initialization is complete, so all Identification Register bits are correct. Before Flash initialization completion, the default setting of the different identification registers are the following: Table 75. IDMEM description Bit Function MEMSIZE Internal memory size Internal Memory size is 4 x (MEMSIZE) (in Kbyte) 0D0h for ST10F276 (832 Kbytes) MEMTYP Internal memory type ‘0h’: ROM-Less ‘1h’: (M) ROM memory ‘2h’: (S) Standard FLASH memory ‘3h’: (H) High Performance FLASH memory (ST10F276) ‘4h...Fh’: reserved IDPROG (F078h / 3Ch) ESFR Reset value:0040h 15 14 13 12 11 10 987 65432 10 PROGVPP PROGVDD RR Table 76. IDPROG description Bit Function PROGVDD Programming VDD voltage VDD voltage when programming EPROM or FLASH devices is calculated using the following formula: VDD = 20 x [PROGVDD] / 256 (volts) - 40h for ST10F276 (5V). PROGVPP Programming VPP voltage (no need of external VPP) - 00h IDMANUF 0403h IDCHIP 114xh (x = silicon revision) IDMEM F0D0h IDPROG 0040h |
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