Philips Semiconductors

Product specification

NE/SA5209

Wideband variable gain amplifier

1990 Aug 20

4

DC ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

TEST CONDITIONS

LIMITS

UNIT

SYMBOL

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Bandgap loading

2

10

k

Ω

AGC DC control voltage range

0-1.3

V

AGC pin DC bias current

-0.7

-6

µA

AGC pin DC bias current

-10

µA

NOTES:

1. “Over Temperature Range” testing is as follows:

NE is 0 to +70

°C

SA is -40 to +85

°C

At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature

testing only.

AC ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

TEST CONDITIONS

LIMITS

UNIT

SYMBOL

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

BW

-3dB bandwidth

600

850

MHz

BW

-3dB bandwidth

500

MHz

GF

Gain flatness

DC - 500MHz

+0.4

dB

GF

Gain flatness

+0.6

dB

Maximum input voltage swing (single-ended) for

200

Maximum output voltage swing (single-ended)

400

1.9

NF

Noise figure (unmatched configuration)

9.3

dB

Equivalent input noise voltage spectral density

f = 100MHz

2.5

nV/

S12

Reverse isolation

f = 100MHz

-60

dB

Gain supply sensitivity (single-ended)

0.3

dB/V

∆G/∆T

Gain temperature sensitivity

0.013

dB/

Input capacitance (single-ended)

2

pF

-3dB bandwidth of gain control function

20

MHz

1dB gain compression point at output

f = 100MHz

-3

dBm

1dB gain compression point at input

=0.1V

-10

dBm

Third-order intercept point at output

>0.5V

+13

dBm

Third-order intercept point at input

<0.5V

+5

dBm

Gain match output A to output B

0.1

dB

NOTE:

1. “Over Temperature Range” testing is as follows:

NE is 0 to +70

°C

SA is -40 to +85

°C

At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature

testing only.

occurs at input for single-ended gain < 6dB and at output for single-ended gain > 6dB.