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NE5209D датащи(PDF) 7 Page - NXP Semiconductors

номер детали NE5209D
подробное описание детали  Wideband variable gain amplifier
PDF  15 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

NE5209D датащи(HTML) 7 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
7
This circuit will exhibit about a 7dB
noise
figure
with
approximately
22dB
gain.
Narrowband
circuits
have the advantage of greater stabil-
ity, particularly when multiple de-
vices are cascaded.
50
Ω
50
Ω
50
Ω
+5V
+1V
2:1 TURNS RATIO
LC TUNED
TRANSFORMER
SOURCE
OUTPUT
5209
VAGC
SR00242
Figure 6. Narrowband Noise Optimization
This circuit will exhibit about an 8dB
noise figure with 24dB gain.
50
Ω
50
Ω
50
Ω
+5V
+1V
MINI CIRCUITS
4:1 BALUN OR
EQUIVALENT
SOURCE
OUTPUT
5209
1 : 4
VAGC
SR00243
Figure 7. Broadband Gain Optimization
This circuit will exhibit approximate-
ly an 8dB noise figure and 25dB gain.
50
Ω
50
Ω
50
Ω
+5V
+1V
4:1 TURNS RATIO
LC TUNED
TRANSFORMER
SOURCE
OUTPUT
5209
VAGC
SR00244
Figure 8. Narrowband Gain Optimization
The noise figure of this configuration
will be approximately 15dB.
50
Ω
50
Ω
50
Ω
+5V
+1V
SOURCE
OUTPUT
5209
50
Ω
VAGC
SR00245
Figure 9. Simple Amplifier Configuration
With the 50
Ω source left untermi-
nated, the noise figure is 9dB.
50
Ω
50
Ω
50
Ω
+5V
+1V
SOURCE
OUTPUT
5209
VAGC
SR00246
Figure 10. Unterminated Configuration



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