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NE5209D датащи(PDF) 3 Page - NXP Semiconductors

номер детали NE5209D
подробное описание детали  Wideband variable gain amplifier
PDF  15 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

NE5209D датащи(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
3
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
VCC
Supply voltage
-0.5 to +8.0
V
PD
Power dissipation, TA = 25oC (still air)1
16-Pin Plastic DIP
16-Pin Plastic SO
1450
1100
mW
mW
TJMAX
Maximum operating junction temperature
150
°C
TSTG
Storage temperature range
-65 to +150
°C
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θJA:
16-Pin DIP:
θJA = 85°C/W
16-Pin SO:
θJA = 110°C/W
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
VCC
Supply voltage
VCC1 = VCC2 = 4.5 to 7.0V
V
TA
Operating ambient temperature range
NE Grade
SA Grade
0 to +70
-40 to +85
°C
°C
TJ
Operating junction temperature range
NE Grade
SA Grade
0 to +90
-40 to +105
°C
°C
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5V, VAGC = 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ICC
Supply current
DC tested
38
43
48
mA
ICC
Supply current
Over temperature1
30
55
mA
AV
Voltage gain (single-ended in/single-ended out)
DC tested, RL = 10kΩ
17
19
21
dB
AV
Voltage gain (single-ended in/single-ended out)
Over temperature1
16
22
dB
AV
Voltage gain (single-ended in/differential out)
DC tested, RL = 10kΩ
23
25
27
dB
AV
Voltage gain (single-ended in/differential out)
Over temperature1
22
28
dB
RIN
Input resistance (single-ended)
DC tested at
±50µA
0.9
1.2
1.5
k
RIN
Input resistance (single-ended)
Over temperature1
0.8
1.7
k
ROUT
Output resistance (single-ended)
DC tested at
±1mA
40
60
75
ROUT
Output resistance (single-ended)
Over temperature1
35
90
VOS
Output offset voltage (output referred)
+20
±100
mV
VOS
Output offset voltage (output referred)
Over temperature1
±250
mV
VIN
DC level on inputs
1.6
2.0
2.4
V
VIN
DC level on inputs
Over temperature1
1.4
2.6
V
VOUT
DC level on outputs
1.9
2.4
2.9
V
VOUT
DC level on outputs
Over temperature1
1.7
3.1
V
PSRR
Output offset supply rejection ratio
20
45
dB
PSRR
(output referred)
Over temperature1
15
dB
VBG
Bandgap reference voltage
4.5V<VCC<7V
RBG = 10kΩ
1.2
1.32
1.45
V
BG
gp
g
Over temperature1
1.1
1.55



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