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AM29PDL640G датащи(PDF) 43 Page - Advanced Micro Devices

номер детали AM29PDL640G
подробное описание детали  64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control
PDF  61 Pages
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производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29PDL640G датащи(HTML) 43 Page - Advanced Micro Devices

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December 13, 2005
Am29PDL640G
41
D A TA SH EE T
DC CHARACTERISTICS
CMOS Compatible
Notes:
1.
The I
CC current listed is typically less than 2 mA/MHz, with OE# at
V
IH.
2.
Maximum I
CC specifications are tested with VCC = VCCmax.
3.
I
CC active while Embedded Erase or Embedded Program is in
progress.
4.
Automatic sleep mode enables the low power mode when
addresses remain stable for t
ACC + 30 ns. Typical sleep mode
current is 200 nA.
5.
Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN = VSS to VCC,
VCC = VCC max
±1.0
µA
ILIT
A9, OE#, RESET# Input Load Current
VCC = VCC max; VID= 12.5 V
35
µA
I
LO
Output Leakage Current
V
OUT = VSS to VCC, OE# = VIH
VCC = VCC max
±1.0
µA
ICC1
VCC Active Read Current (Notes 1, 2)
CE# = V
IL, OE# = VIH, VCC
= V
CC max
5 MHz
10
20
mA
10 MHz
25
45
ICC2
V
CC Active Write Current (Notes 2, 3)
CE# = V
IL, OE# = VIH, WE# = VIL
15
30
mA
I
CC3
VCC Standby Current (Note 2)
CE#, RESET#, WP#/ACC = VIO ± 0.3 V
1
5
µA
ICC4
V
CC Reset Current (Note 2)
RESET# = V
SS ± 0.3 V
1
5
µA
I
CC5
Automatic Sleep Mode (Notes 2, 4)
V
IH = VIO ± 0.3 V;
VIL = VSS ± 0.3 V
15
µA
I
CC6
VCC Active Read-While-Program Current
(Notes 1, 2)
CE# = V
IL, OE# = VIH
Word
21
45
mA
ICC7
VCC Active Read-While-Erase Current
(Notes 1, 2)
CE# = VIL, OE# = VIH
Word
21
45
mA
I
CC8
V
CC Active Program-While-Erase-
Suspended Current (Notes 2, 5)
CE# = VIL, OE# = VIH
17
35
mA
VIL
Input Low Voltage
VIO = 1.65–1.95 V
–0.4
0.4
V
VIO = 2.7–3.1 V
–0.5
0.8
V
V
IH
Input High Voltage
V
IO = 1.65–1.95 V
VIO–0.4
VIO+0.4
V
VIO = 2.7–3.1 V
2
V
CC+0.3
V
VHH
Voltage for ACC Program Acceleration
V
CC = 3.0 V ± 10%
8.5
9.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
VCC = 3.0 V ± 10%
11.5
12.5
V
VOL
Output Low Voltage
IOL = 100 µA, VCC = VCC min, VIO = 1.65–1.95 V
0.1
V
IOL = 4.0 mA, VCC = VCC min, VIO = 2.7–3.1 V
0.4
V
V
OH
Output High Voltage
IOH = –100 µA, VCC = VCC min,
VIO = 1.65–1.95 V
V
IO–0.1
V
IOH = –2.0 mA, VCC = VCC min, VIO = 2.7–3.1 V
2.4
V
VLKO
Low VCC Lock-Out Voltage (Note 5)
2.3
2.5
V



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