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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AM29PDL640G датащи(PDF) 28 Page - Advanced Micro Devices |
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AM29PDL640G датащи(HTML) 28 Page - Advanced Micro Devices |
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28 / 61 page  26 Am29PDL640G December 13, 2005 D A TA SH EE T Table 12. Device Geometry Definition Addresses Data Description 27h 0017h Device Size = 2N byte 28h 29h 0001h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 0000h 0000h Max. number of byte in multi-byte write = 2N (00h = not supported) 2Ch 0003h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 0007h 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 007Dh 0000h 0000h 0001h Erase Block Region 2 Information (refer to the CFI specification or CFI publication 100) 35h 36h 37h 38h 0007h 0000h 0020h 0000h Erase Block Region 3 Information (refer to the CFI specification or CFI publication 100) 39h 3Ah 3Bh 3Ch 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to the CFI specification or CFI publication 100) |
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