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MMST3906 датащи(PDF) 4 Page - Diodes Incorporated

номер детали MMST3906
подробное описание детали  150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS
PDF  9 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMST3906 датащи(HTML) 4 Page - Diodes Incorporated

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Electrical Characteristics: Discrete NPN Transistor (Q2) @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
VCBO
60
⎯
V
IC = 10uA, IE = 0
DS30749 Rev. 3 - 2
4 of 9
www.diodes.com
LBN150B01
© Diodes Incorporated
Collector-Emitter Breakdown Voltage
VCEO
40
⎯
V
IC = 1.0mA, IB = 0
B
Emitter-Base Breakdown Voltage
VEBO
6
⎯
V
IE = 10μA, IC = 0
Collector Cutoff Current
ICEX
⎯
50
nA
VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current
IBL
⎯
50
nA
VCE = 30V, VEB(OFF) = 3.0V
Collector-Base Cut Off Current
ICBO
⎯
50
nA
VCB = 30V, IE = 0
Collector-Emitter Cut Off Current
ICEO
⎯
50
nA
VCE = 30V, IB = 0
B
Emitter-Base Cut Off Current
IEBO
⎯
50
nA
VEB = 5V, IC = 0
ON CHARACTERISTICS (Note 4)
150
⎯
⎯
VCE = 1V, IC = 100 μA
170
⎯
⎯
VCE = 1V, IC = 1 mA
160
⎯
⎯
VCE = 1V, IC = 10 mA
70
⎯
⎯
VCE = 1V, IC = 50 mA
30
⎯
⎯
VCE = 1V, IC = 100 mA
DC Current Gain
hFE
12
⎯
⎯
VCE = 1V, IC = 200 mA
⎯
0.08
IC = 10 mA, IB = 1 mA
B
⎯
0.16
IC = 50mA, IB = 5mA
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.36
V
IC = 200mA, IB = 20mA
Equivalent on-resistance
RCE(SAT)
⎯
1.8
Ω
IC = 200mA, IB = 20mA
B
Base-Emitter Turn-on Voltage
VBE(ON)
⎯
0.98
V
VCE = 5V, IC = 200mA
⎯
0.95
IC = 10mA, IB = 1mA
B
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
1.1
V
IC = 50mA, IB = 5mA
B
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COBO
⎯
4
pF
VCB = 5.0 V, f = 1.0 MHz, IE = 0
Input Capacitance
CIBO
⎯
8
pF
VEB = 5.0 V, f = 1.0 MHz, IC = 0
Input Impedance
hIE
2
12
K
Ω
Voltage Feedback ratio
hRE
0.1
10
x 10E-4
Small Signal Current Gain
hFE
100
400
⎯
hOE
3
60
μS
VCE = 1.0V, Ic = 10mA, f = 1.0 KHz
Output Admittance
Current Gain-Bandwidth Product
fT
250
⎯
MHz
VCE = 20V, IC = 0mA, f = 100 MHz
NF
⎯
4
dB
VCE = 5V, Ic = 100 uA, Rs = 1Ω,
f =1 KHz
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
td
⎯
35
ns
VCC = -3.0 V, IC = 10 mA,
Rise Time
tr
⎯
35
ns
VBE(OFF) = 0.5V, IB1 = 1.0 mA
Typical Characteristics
0
50
100
25
50
75
100
125
150
175
T , AMBIENT TEMPERATURE (°C)
Fig. 3, Max Power Dissipation vs
Ambient Temperature
A
150
200
250
300
350
0



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