MMST3906 datasheet(1/9 Pages) DIODES

номер детали	MMST3906

подробное описание детали	150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS

PDF	9 Pages

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производитель	DIODES [Diodes Incorporated]

домашняя страница	http://www.diodes.com

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LBN150B01

150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS

General Description

•

LMN150B01 is best suited for applications where the load

needs to be turned on and off using control circuits like

micro-controllers, comparators etc. particularly at a point of

load. It features a discrete PNP pass transistor with stable

Vce_sat which does not depend on the input voltage and

can support maximum continuous current of 150 mA up to

125 °C (see fig. 3). It also contains a discrete NPN that can

be used as a control. The component devices can be used

as a part of a circuit or as stand alone discrete devices.

Features

•

Epitaxial Planar Die Construction

•

Ideally Suited for Automated Assembly Processes

•

Lead Free By Design/ROHS Compliant (Note 1)

•

"Green" Device (Note 2)

Mechanical Data

•

Case: SOT-26

•

Case Material: Molded Plastic. "Green Molding"

Compound. UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminal Connections: See Diagram

•

Terminals: Finish - Matte Tin annealed over Copper

leadframe. Solderable per MIL- STD -202, Method 208

•

Marking & Type Code Information: See Page 8

•

Ordering Information: See Page 8

•

Weight: 0.016 grams (approximate)

1

2

3

4

5

6

Fig. 1: SOT-26

BQ1

Q1

PNP_MMST3906

BQ2

5

CQ2

EQ1

EQ2

CQ1

6

1

Q2

NPN_MMST3904

23

4

Fig. 2: Schematic and Pin Configuration

DS30749 Rev. 3 - 2

1 of 9

www.diodes.com

LBN150B01

Sub-Component P/N

Reference

Device Type

Figure

MMST3906

Q1

PNP Transistor

2

MMST3904

Q2

NPN Transistor

2

Maximum Ratings, Total Device @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Output Current

Iout

150

mA

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3)

Pd

300

mW

Pder

2.33

mW/

°C

Power Derating Factor above 120

°C

Junction Operation and Storage Temperature Range

Tj,Tstg

-55 to +150

°C

Thermal Resistance, Junction to Ambient Air (Note 3)

(Equivalent to one heated junction of PNP transistor)

RθJA

417

°C/W

Notes:

1. No purposefully added lead.

2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Page 9.

Аналогичный номер детали - MMST3906

производитель	номер детали	датащи	подробное описание детали
Transys Electronics	MMST3906	200Kb / 2P	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Rohm	MMST3906	169Kb / 4P	PNP General Purpose Transistor
Diodes Incorporated	MMST3906	42Kb / 2P	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DS30079 Rev. 2P-1
Galaxy Semi-Conductor H...	MMST3906	328Kb / 4P	PNP Silicon Epitaxial Planar Transistor
Rectron Semiconductor	MMST3906	619Kb / 2P	SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP)

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