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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MMST3906 датащи(PDF) 3 Page - Diodes Incorporated |
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MMST3906 датащи(HTML) 3 Page - Diodes Incorporated |
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3 / 9 page  DS30749 Rev. 3 - 2 3 of 9 www.diodes.com LBN150B01 © Diodes Incorporated Electrical Characteristics: Discrete PNP Transistor (Q1) @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage VCBO -40 ⎯ V IC = -10uA, IE = 0 Collector-Emitter Breakdown Voltage VCEO -40 ⎯ V IC = -1.0mA, IB = 0 B Emitter-Base Breakdown Voltage VEBO -6 ⎯ V IE = -10μA, IC = 0 Collector Cutoff Current ICEX ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V Base Cutoff Current IBL ⎯ -50 nA VCE = -30V, VEB(OFF) = -3.0V Collector-Base Cut Off Current ICBO ⎯ -50 nA VCB = -30V, IE = 0 Collector-Emitter Cut Off Current ICEO ⎯ -50 nA VCE = -30V, IB = 0 B Emitter-Base Cut Off Current IEBO ⎯ -50 nA VEB = -5V, IC = 0 ON CHARACTERISTICS (Note 4) 105 ⎯ ⎯ VCE = -1V, IC = -100 μA 110 ⎯ ⎯ VCE = -1V, IC = -1 mA 120 ⎯ ⎯ VCE = -1V, IC = -10 mA 90 ⎯ ⎯ VCE = -1V, IC = -50 mA 32 ⎯ ⎯ VCE = -1V, IC = -100 mA DC Current Gain hFE 10 ⎯ ⎯ VCE = -1V, IC = -200 mA ⎯ -0.08 IC = - 10 mA, IB = -1 mA B ⎯ -0.15 IC = -50mA, IB = -5mA Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.5 V IC = -200mA, IB = -20mA Equivalent on-resistance RCE(SAT) ⎯ 2.5 Ω IC = -200mA, IB = -20mA B Base-Emitter Turn-on Voltage VBE(ON) ⎯ -0.92 V VCE = -5V, IC = -200mA ⎯ -0.95 IC = -10mA, IB = -1mA B Base-Emitter Saturation Voltage VBE(SAT) ⎯ -1.1 V IC = -50mA, IB = -5mA B SMALL SIGNAL CHARACTERISTICS Output Capacitance COBO ⎯ 4 pF VCB = -5.0 V, f = 1.0 MHz, IE = 0 Input Capacitance CIBO ⎯ 8 pF VEB = -5.0 V, f = 1.0 MHz, IC = 0 Input Impedance hIE 2 12 K Ω Voltage Feedback ratio hRE 0.1 10 x 10E-4 Small Signal Current Gain hFE 100 400 ⎯ Output Admittance hOE 3 60 μS VCE = 1.0V, Ic = 10mA, f = 1.0 KHz Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = - 20V, IC = -10mA, f = 100 MHz Noise Figure NF ⎯ 4 dB VCE = - 5V, Ic = -100 uA, Rs = 1Ω, f =1 KHz SWITCHING CHARACTERISTICS Delay Time td ⎯ 35 ns VCC = -3.0 V, IC = -10 mA, Rise Time tr ⎯ 35 ns VBE(OFF) = 0.5V, IB1 = -1.0 mA Storage Time ts ⎯ 225 ns VCC = -3.0 V, IC = -10 mA, Fall Time tf ⎯ 75 ns IB1 = IB2 = -1.0 mA |
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