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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BZA109 датащи(PDF) 4 Page - NXP Semiconductors |
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BZA109 датащи(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  1997 Dec 01 4 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor BZA109 GRAPHICAL DATA Fig.2 Maximum non-repetitive peak reverse current as a function of pulse time. handbook, halfpage 10 1 MBK269 10−1 110 tp (ms) IZSM (A) Fig.3 Power derating curve. One or more diodes loaded. handbook, halfpage 050 Ptot (W) 100 200 Tamb (°C) 2.0 1.5 0.5 0 1.0 150 MBK393 Fig.4 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). PZSM =VZSM × IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM. handbook, halfpage 102 10 MBK270 10−1 110 tp (ms) PZSM (W) Fig.5 Diode capacitance as a function of reverse voltage; typical values. Tj =25 °C; f = 1 MHz. handbook, halfpage 0 150 100 50 0 26 VR (V) 4 Cd (pF) MBK272 |
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