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BZA109 датащи(PDF) 2 Page - NXP Semiconductors |
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BZA109 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1997 Dec 01 2 Philips Semiconductors Product specification 9-fold ESD transient voltage suppressor BZA109 FEATURES • ESD rating >8 kV, according to IEC1000-4-2 • SOT163-1 surface mount package • Common anode configuration • Non-clamping range 0.5 to 6.8 V • Maximum non-repetitive peak reverse power dissipation: 25 W at tp =1ms • Maximum clamping voltage at peak pulse current: 10 V at IZSM = 2.5 A. APPLICATIONS • For 9-bit wide undershoot/ overshoot clamping and fast ESD transient suppression in: – Computers and peripherals – Audio and video equipment – Business machines – Communication systems – Medical equipment. DESCRIPTION 9-fold monolithic transient voltage suppressor in an SO20; SOT163-1 surface mount package. The device is ideal in situations where board space is a premium. PINNING PIN DESCRIPTION 1 to 5 input (IN1 to IN5) 6 and 15 common anode (GND) 7 to 10 input (IN6 to IN9) 11 to 14 output (OUT9 to OUT6) 16 to 20 output (OUT5 to OUT1) Fig.1 Pin configuration for SO20 (SOT163-1) and symbol. handbook, 4 columns SO20 MBK268 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 19 18 17 16 15 14 13 12 11 20 2 3 4 5 6 7 8 9 10 1 OUT1 IN1 OUT2 IN2 OUT3 IN3 OUT4 IN4 OUT5 IN5 GND GND OUT6 IN6 OUT7 IN7 OUT8 IN8 OUT9 IN9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Current is flowing from input to corresponding output. 2. One or more diodes loaded. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode IZ working current Tamb =25 °C − 20 mA IF continuous forward current Tamb =25 °C − 100 mA IFT feed-through current Tamb =25 °C; note 1 − 100 mA IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 4.5 A IZSM non-repetitive peak reverse current tp = 1 ms; square pulse; see Fig.2 − 2.5 A Ptot total power dissipation Tamb ≤ 25 °C; note 2; see Fig.3 − 1.25 W PZSM non-repetitive peak reverse power dissipation tp = 1 ms; square pulse; see Fig.4 − 25 W Tstg storage temperature −65 +150 °C Tj operating junction temperature −65 +150 °C |
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