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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32G431C6 датащи(PDF) 115 Page - STMicroelectronics |
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STM32G431C6 датащи(HTML) 115 Page - STMicroelectronics |
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115 / 198 page  DS12589 Rev 6 115/198 STM32G431x6 STM32G431x8 STM32G431xB Electrical characteristics 160 FM+ Fmax(5) Maximum frequency C=50 pF, 1.6 V≤VDD≤3.6 V -1 MHz Tr/TF(4) Output high to low level fall time -5 ns 1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the SYSCFG_CFGR1 register. Refer to the reference manual RM0440 "STM32G4 Series advanced Arm®- based 32-bit MCUs" for a description of GPIO Port configuration register. 2. Guaranteed by design. 3. This value represented the I/O capability but maximum system frequency is 170 MHz. 4. The fall time is defined between 70% and 30% of the output waveform accordingly to I2C specification. 5. The maximum frequency is defined with the following conditions: - (Tr+ Tf) ≤ 2/3 T. - 45%<Duty cycle<55% Table 56. I/O FT_c AC characteristics(1) (2) 1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the SYSCFG_CFGR1 register. Refer to the reference manual RM0440 "STM32G4 Series advanced Arm®- based 32-bit MCUs" for a description of GPIO Port configuration register. 2. Guaranteed by design. Speed Symbol Parameter Conditions Min Max Unit 0 Fmax Maximum frequency C=50 pF, 2.7 V≤VDD≤3.6 V - 2 MHz C=50 pF, 1.6 V≤VDD≤2.7 V - 1 Tr/Tf Output H/L to L/H level fall time C=50 pF, 2.7 V≤VDD≤3.6 V - 170 ns C=50 pF, 1.6 V≤VDD≤2.7 V - 330 1 Fmax Maximum frequency C=50 pF, 2.7 V≤VDD≤3.6 V - 10 MHz C=50 pF, 1.6 V≤VDD≤2.7 V - 5 Tr/Tf Output H/L to L/H level fall time C=50 pF, 2.7 V≤VDD≤3.6 V - 35 ns C=50 pF, 1.6 V≤VDD≤2.7 V - 65 Table 55. I/O (except FT_c) AC characteristics(1) (2) (continued) Speed Symbol Parameter Conditions Min Max Unit |
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