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STM32G431C6 датащи(PDF) 74 Page - STMicroelectronics

номер детали STM32G431C6
подробное описание детали  Arm® Cortex®-M4 32-bit MCUFPU, 170 MHz /213 DMIPS,up to 128 KB Flash, 32 KB SRAM, rich analog, math accelerator
PDF  198 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STM32G431C6 датащи(HTML) 74 Page - STMicroelectronics

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Electrical characteristics
STM32G431x6 STM32G431x8 STM32G431xB
74/198
DS12589 Rev 6
5.3.4
Embedded voltage reference
The parameters given in Table 20 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 17: General operating
conditions.
Table 20. Embedded internal voltage reference
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference
voltage
–40 °C < TA < +130 °C 1.182 1.212 1.232
V
tS_vrefint (1)
1. The shortest sampling time is determined in the application by multiple iterations.
ADC sampling time
when reading the
internal reference
voltage
-4(2)
2. Guaranteed by design.
--
µs
tstart_vrefint
Start time of reference
voltage buffer when
ADC is enable
--
8
12(2)
µs
IDD(VREFINTBUF)
VREFINT buffer
consumption from VDD
when converted by
ADC
--
12.5
20(2)
µA
∆VREFINT
Internal reference
voltage spread over
the temperature range
VDD = 3 V
-
5
7.5(2)
mV
TCoeff
Average temperature
coefficient
–40°C < TA < +130°C
-
30
50(2)
ppm/°C
ACoeff
Long term stability
1000 hours, T = 25°C
-
300
1000(2)
ppm
VDDCoeff
Average voltage
coefficient
3.0 V < VDD < 3.6 V
-
250
1200(2) ppm/V
VREFINT_DIV1
1/4 reference voltage
-
24
25
26
%
VREFINT
VREFINT_DIV2
1/2 reference voltage
49
50
51
VREFINT_DIV3
3/4 reference voltage
74
75
76



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