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MP8020 датащи(PDF) 22 Page - MPS Industries, Inc.

номер детали MP8020
подробное описание детали  IEEE 802.3af/at/bt-Compliant,PoE, Powered Device Interface
PDF  27 Pages
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производитель  MPSIND [MPS Industries, Inc.]
домашняя страница  http://www.mpsind.com/index.html
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MP8020 датащи(HTML) 22 Page - MPS Industries, Inc.

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MP8020 – IEEE 802.3af/at/bt, PoE, POWERED DEVICE INTERFACE
MP8020 Rev. 1.0
MonolithicPower.com
22
2/17/2022
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2022 MPS. All Rights Reserved.
The MP8020 also has an inrush current limit
function after start-up, which is about 1/7 of the
steady state current limit.
Selecting the PoE Power MOSFET
The MP8020 internal hot-swap MOSFET has a
maximum 1.6A current limit. For type 1, 2, and
3 PDs (≤51W), the internal hot-swap MOSFET
is sufficient. For type 4 PDs (>51W), an external
MOSFET must be placed in parallel with the
internal hot-swap MOSFET. The GATE1 pin
can drive one external N-channel MOSFET.
The MOSFET should be selected to meet the
following specifications:
 The voltage rating should be at least 100V
for high-voltage surge environments.
 The on resistance (RDS(ON)) should be below
200mΩ for power dissipation and for light-
load shutdown functions. A 100mΩ RDS(ON)
is typically recommended.
 The gate charge (QG) should be as small as
possible to provide faster response times
under overload conditions. It is typically
recommended for QG to be below 15nC
(VGATE = 4.5V).
 The gate threshold voltage should be below
4V to fully drive the GATE1 and GATE2
voltages.
SENSE Pin Setting
The external parallel MOSFET current limit is
configured by a resistor (RSENSE) between the
VDD
and
SENSE
pins.
It
is
typically
recommended for RSENSE to be 18mΩ. The total
current limit (IIN_LIM) can be calculated using
Equation (1):
IN _ LIM
INNER
SENSE
26mV
II
R

(1)
Where IIN_LIM is the PD current limit, and IINNER is
the MP8020 internal hot-swap MOSFET current
limit.
When the external MOSFET is connected, it is
recommended to set IINNER to 0.9A.
Selecting the Adapter MOSFET
The GATE2 pin is designed to drive one
external N-channel MOSFET for the adapter
supply. Select the adapter MOSFET using the
same guidelines as the PoE power MOSFET.
Design Example
Table 6 shows a design example following the
application guidelines for the specifications
below.
Table 6: Design Example
VDD
Class Level
VADP
54V
Class 8
24V
For the detailed application schematic, see
Figure 8 on page 24. For the typical
performance and circuit waveforms, see the
Typical Performance Characteristics section on
page 12. For more device applications, refer to
the related evaluation board datasheet.



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