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MP8020 датащи(PDF) 22 Page - MPS Industries, Inc. |
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MP8020 датащи(HTML) 22 Page - MPS Industries, Inc. |
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22 / 27 page ![]() MP8020 – IEEE 802.3af/at/bt, PoE, POWERED DEVICE INTERFACE MP8020 Rev. 1.0 MonolithicPower.com 22 2/17/2022 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2022 MPS. All Rights Reserved. The MP8020 also has an inrush current limit function after start-up, which is about 1/7 of the steady state current limit. Selecting the PoE Power MOSFET The MP8020 internal hot-swap MOSFET has a maximum 1.6A current limit. For type 1, 2, and 3 PDs (≤51W), the internal hot-swap MOSFET is sufficient. For type 4 PDs (>51W), an external MOSFET must be placed in parallel with the internal hot-swap MOSFET. The GATE1 pin can drive one external N-channel MOSFET. The MOSFET should be selected to meet the following specifications: The voltage rating should be at least 100V for high-voltage surge environments. The on resistance (RDS(ON)) should be below 200mΩ for power dissipation and for light- load shutdown functions. A 100mΩ RDS(ON) is typically recommended. The gate charge (QG) should be as small as possible to provide faster response times under overload conditions. It is typically recommended for QG to be below 15nC (VGATE = 4.5V). The gate threshold voltage should be below 4V to fully drive the GATE1 and GATE2 voltages. SENSE Pin Setting The external parallel MOSFET current limit is configured by a resistor (RSENSE) between the VDD and SENSE pins. It is typically recommended for RSENSE to be 18mΩ. The total current limit (IIN_LIM) can be calculated using Equation (1): IN _ LIM INNER SENSE 26mV II R (1) Where IIN_LIM is the PD current limit, and IINNER is the MP8020 internal hot-swap MOSFET current limit. When the external MOSFET is connected, it is recommended to set IINNER to 0.9A. Selecting the Adapter MOSFET The GATE2 pin is designed to drive one external N-channel MOSFET for the adapter supply. Select the adapter MOSFET using the same guidelines as the PoE power MOSFET. Design Example Table 6 shows a design example following the application guidelines for the specifications below. Table 6: Design Example VDD Class Level VADP 54V Class 8 24V For the detailed application schematic, see Figure 8 on page 24. For the typical performance and circuit waveforms, see the Typical Performance Characteristics section on page 12. For more device applications, refer to the related evaluation board datasheet. |
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