MP8020 – IEEE 802.3af/at/bt, PoE, POWERED DEVICE INTERFACE

MP8020 Rev. 1.0

MonolithicPower.com

6

2/17/2022

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ELECTRICAL CHARACTERISTICS (continued)

VDD = 54V, TJ = -40°C to +125°C (6), typical values are tested at TJ = 25°C, unless otherwise noted.

Parameter

Symbol Condition

Min

Typ

Max

Units

Under-Voltage Lockout (UVLO)

VDD turn-on threshold

VDD_R

VDD rising

37

38.5

40

V

VDD turn-off threshold

VDD_F

VDD falling

30

31.5

33

V

VDD UVLO hysteresis

VDD_HYS

5

7

V

IC supply current during

operation

IIN

No load and no R_MPS resistor

1

1.5

mA

Input leakage current

VDD = 29.5V

150

250

μA

Hot-Swap MOSFET and Current Limit

Internal MOSFET on

resistance

RDS(ON)

ISRC = 500mA

0.35

Ω

Leakage current

ISRC-LK

VDD = 57V, VSRC = 0V,

AUX = high, PRI = high

1

15

μA

ILIM detection period

270

μs

ILIM detection current

130

165

180

μA

ILIM voltage threshold

0.9A setting voltage range

0.8

V

1.6A setting voltage range1

2.2

V

Internal MOSFET current

limit

ILIMIT

VSRC drops from VDD, VDD -VSRC = 1V

ILIM = 0V

0.75

0.9

1.05

A

Connect ILIM to GND via a

7.15kΩ resistor

1.4

1.6

1.8

A

Internal MOSFET inrush

limit

IINRUSH

VSRC ramps up from low to high, VDD -VSRC = 1V

ILIM = 0V

70

130

190

mA

Connect ILIM to GND via a

7.15kΩ resistor

170

230

290

mA

Inrush current termination

ITERM

VSRC rising, ITERM / IINRUSH

75%

IINRUSH

Inrush to operation mode

delay

tDELAY

80

90

100

ms

Current foldback threshold

VSRC falling, VDD -VSRC

8.2

10

11.8

V

Foldback deglitch time (7)

VSRC falling to inrush current

foldback

1

ms

GATE1 source current

VGATE1 -VSRC = 4V

10

μA

GATE1 sink current

VGATE1 -VSRC = 4V

30

μA

GATE1 max driving voltage

6

V

External MOSFET current

limit

VDD - VSENSE

22

26

30

mV

SENSE leakage current

VSENSE = VDD = 54V

0.1

μA

PG, BT, TYP1, TYP2

Output low voltage

ISINK = 1mA

0.2

0.4

V

Leakage current

Logic = high, connect to 57V

1

μA