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M25P16 датащи(PDF) 42 Page - STMicroelectronics

номер детали M25P16
подробное описание детали  16 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface
PDF  55 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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M25P16 датащи(HTML) 42 Page - STMicroelectronics

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DC and AC parameters
M25P16
42/55
tPP
(8)
Page Program cycle time (256 Bytes)
0.64
5ms
Page Program cycle time (n Bytes, where n = 1
to 4)
0.01
Page Program cycle time (n Bytes, where n = 5
to 256)
int(n/8) × 0.02(9)
tSE
Sector erase cycle Time
0.6
3
s
tBE
Bulk erase cycle Time
13
40
s
1.
Preliminary data.
2.
Details of how to find the Technology Process in the marking are given in AN1995, see also Section 12:
Part numbering.
3.
Typical values given for TA = 25°C.
4.
tCH + tCL must be greater than or equal to 1/ fC
5.
Value guaranteed by characterization, not 100% tested in production.
6.
Expressed as a slew-rate.
7.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
8.
When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1
≤n ≤
256)
9.
int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Table 16.
AC characteristics (Grade 6, T9HX (0.11µm) technology)(1) (continued)
Applies only to products made with T9HX (0.11µm) Technology, identified with Process digit
“4”(2)
Test conditions specified in Table 10 and Table 12
Symbol Alt.
Parameter
Min.
Typ.(3)
Max.
Unit



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