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160N75F3 датащи(PDF) 5 Page - STMicroelectronics

номер детали 160N75F3
подробное описание детали  N-channel 75V - 3.5m ohm - 120A - TO-220 - TO-247 - D2PAK MDmesh TM low voltage Power MOSFET
PDF  13 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

160N75F3 датащи(HTML) 5 Page - STMicroelectronics

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STB160N75F3 - STP160N75F3 - STW160N75F3
Electrical characteristics
5/13
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=35 V, ID= 60A,
RG=4.7Ω, VGS=10V,
(see Figure 4)
Tbd
Tbd
Tbd
Tbd
ns
ns
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
ISD
ISDM
(1)
1.
Pulse with limited by safe operating area
Source-drain current
Source-drain current (pulsed)
120
480
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD=120A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120A, di/dt =
100A/µs, VDD=30 V,
Tj=150°C
(see Figure 3)
75
195
5
ns
nC
A



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