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160N75F3 датащи(PDF) 4 Page - STMicroelectronics

номер детали 160N75F3
подробное описание детали  N-channel 75V - 3.5m ohm - 120A - TO-220 - TO-247 - D2PAK MDmesh TM low voltage Power MOSFET
PDF  13 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

160N75F3 датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB160N75F3 - STP160N75F3 - STW160N75F3
4/13
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
75
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,@125°C
10
100
µA
µA
IGSS
Gate body leakage
current
(VDS = 0)
VGS = ±20V
±
200
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
24
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 60A
D²PAK
3.5
3.2
4.5
4.2
m
Ω
m
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min
Typ
Max Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward
transconductance
VDS =15V, ID= 4.5A
ID = 10A
Tbd
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
7000
1100
32
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=44V, ID = 60A
VGS =10V
(see Figure 2)
110
Tbd
Tbd
Tbd
nC
nC
nC



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