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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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160N75F3 датащи(PDF) 3 Page - STMicroelectronics |
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160N75F3 датащи(HTML) 3 Page - STMicroelectronics |
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3 / 13 page  STB160N75F3 - STP160N75F3 - STW160N75F3 Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 75 V VGS Gate-source voltage ± 20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25°C 120 A ID (1) Drain current (continuous) at TC = 100°C 96 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 480 A PTOT (3) 3. Rated according to Rthj-case Total dissipation at TC = 25°C 315 W Derating factor 2.1 W/°C dv/dt Peak diode recovery voltage slope Tbd V/ns EAS Single pulse avalanche energy Tbd mJ Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.48 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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