1.

Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in ultra small

Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

1.2 Features and benefits

 Low threshold voltage

 Surface mounted package

 Low on-state resistance

 Footprint 63% smaller than SOT23

1.3 Applications

 Driver circuits

 Switching in portable appliances

1.4 Quick reference data

2.

Pinning information

PMR400UN

N-channel TrenchMOS ultra low level FET

Rev. 2 — 2 February 2012

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 150 °C

--30

V

ID

drain current

Tsp =25 °C; VGS = 4.5 V

--0.8

A

VGS

gate-source voltage

-8

-

8

V

Static characteristics

RDSon

drain-source on-state

resistance

VGS =4.5 V; ID = 0.2 A; Tj = 25 °C

-

400

480

m

Ω

Table 2.

Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

G

gate

SOT416 (SC-75)

2S

source

3

D

drain

12

3

S

D

G

017aaa253