PMR400UN

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 2 — 2 February 2012

5 of 13

NXP Semiconductors

PMR400UN

N-channel TrenchMOS ultra low level FET

7.

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =1µA; VGS =0V; Tj = 25 °C

30

--V

ID =1µA; VGS =0V; Tj = -55 °C

27

--V

VGS(th)

gate-source threshold

voltage

ID =0.25mA; VDS =VGS; Tj = 25 °C

0.45

0.7

1

V

ID =0.25mA; VDS =VGS; Tj = 150 °C

0.25

-

-

V

ID =0.25mA; VDS =VGS; Tj = -55 °C

--1.2

V

IDSS

drain leakage current

VDS =30V; VGS =0V; Tj = 25 °C

--1

µA

VDS =30V; VGS =0V; Tj = 150 °C

-

-

100

µA

IGSS

gate leakage current

VGS =8V; VDS =0V; Tj = 25 °C

-

10

100

nA

VGS =-8 V; VDS =0V; Tj = 25 °C

-

10

100

nA

RDSon

drain-source on-state

resistance

VGS =4.5 V; ID = 0.2 A; Tj = 25 °C

-

400

480

m

Ω

VGS =4.5 V; ID = 0.2 A; Tj = 150 °C

-

660

816

m

Ω

VGS =2.5 V; ID = 0.1 A; Tj = 25 °C

-

480

580

m

Ω

VGS =1.8 V; ID = 0.075 A; Tj = 25 °C

-

580

830

m

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID =1A; VDS =15V; VGS =4.5 V;

Tj =25°C

-0.89

-nC

QGS

gate-source charge

-

0.1

-

nC

QGD

gate-drain charge

-

0.2

-

nC

Ciss

input capacitance

VDS =25V; VGS = 0 V; f = 1 MHz;

Tj =25°C

-43

-pF

Coss

output capacitance

-

7.7

-

pF

Crss

reverse transfer

capacitance

-4.8

-pF

td(on)

turn-on delay time

VDS =15V; RL =15 Ω; VGS =4.5 V;

RG(ext) =6 Ω; Tj =25 °C

-4

-ns

tr

rise time

-

7.5

-

ns

td(off)

turn-off delay time

-

18

-

ns

tf

fall time

-

4.5

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 0.3 A; VGS =0V; Tj = 25 °C

-

0.76

1.2

V