PMR400UN

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 2 — 2 February 2012

6 of 13

NXP Semiconductors

PMR400UN

N-channel TrenchMOS ultra low level FET

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature

03an94

0

0.5

1

1.5

2

2.5

0

0.5

1

1.5

2

VDS (V)

ID

(A)

4.5

3

2.5

2

1.8

VGS (V) = 1.5

03an96

0

0.5

1

1.5

2

2.5

012

34

VGS (V)

ID

(A)

Tj = 150

°C

25

°C

03an95

0

0.2

0.4

0.6

0.8

1

0

0.5

1

1.5

2

2.5

ID (A)

RDSon

(

Ω)

4.5

3

2.5

2

VGS (V) = 1.8

03af18

0

0.5

1

1.5

2

-60

0

60

120

180

Tj (

°C)

a