UPD78P324LP datasheet(64/82 Pages) RENESAS

номер детали	UPD78P324LP

подробное описание детали	MOS INTEGRATED CIRCUIT

PDF	82 Pages

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µPD78P324, 78P324(A)

Parameter

High-level input voltage

Low-level input voltage

Input leakage current

High-level output voltage

Low-level output voltage

Input current

Output leakage current

VDDP supply voltage

VPP supply voltage

VDDP supply current

VPP supply current

SymbolNote 1

VIH

VIL

ILI

VOH

VOL

—

VCC

VPP

IDD

IPP

Condition

≤ VI ≤ VDDPNote 2

IOH = –400

µA

IOL = 2.0

µA

A9(P20/NMI) pin, 0

≤ VO ≤ VDDP

≤VO ≤ VDDP, OE = VIH

Program memory Write mode

Program memory Read mode

Program memory Write mode

Program memory Read mode

Program memory Write mode

Program memory Read mode

Program memory Write mode

CE = PGM

Program memory Read mode

VPP = VDD

DC Programming Characteristics (TA = 25

±5 °C, VSS = 0 V)

MIN.

TYP.

MAX.

Unit

2.4

VDDP+0.3

–0.3

0.8

±10

µA

2.4

0.45

±10

µA

±10

µA

6.25

6.75

4.5

5.0

5.5

12.2

12.5

12.8

VPP = VDDP

100

µA

Notes 1. Refers to the symbol of the corresponding

µPD27C1001A.

2. VDDP refers to the VDD pin in programming.

Symbol

VIH

VIL

ILI

VOH

VOL

IA9

ILO

VDDP

VPP

IDD

IPP

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