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M58BW16F датащи(PDF) 46 Page - STMicroelectronics

номер детали M58BW16F
подробное описание детали  16 or 32 Mbit (x32, Boot Block, Burst) 3.3V supply Flash memories
PDF  81 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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M58BW16F датащи(HTML) 46 Page - STMicroelectronics

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DC and AC parameters
M58BW16F, M58BW32F
46/81
1.
The Standby mode can be disabled by setting the Standby Disable bit (M14) of the Burst Configuration
Register to ‘1’.
2.
IDDP-UP is defined only during the power-up phase, from the moment current is applied with RP Low to the
moment when the supply voltage has become stable and RP is brought to High.
Table 16.
Device capacitance(1)(2)
1.
TA = 25°C, f = 1 MHz
2.
Sampled only, not 100% tested.
Symbol
Parameter
Test Condition
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0V
6
8
pF
COUT
Output Capacitance
VOUT = 0V
8
12
pF
Table 17.
DC characteristics
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤V
IN ≤VDDQ
±1
µA
ILO
Output Leakage Current
0V≤VOUT ≤VDDQ
±5
µA
IDD
(1)
Supply Current (Random
Read)
E = VIL, G = VIH,
fadd = 6MHz
25
mA
IDDP-UP
(2)
Supply Current (Power-up)
20
mA
IDDB
(1)
Supply Current (Burst
Read)
E = VIL, G = VIH,
fclock = 75MHz
50
mA
IDD1
(1)
Supply Current (Standby)
E = RP = VDD ±
0.2V
150
µA
IDD2
(1)
Supply Current (Program
or Erase)
Program, Erase in
progress
30
mA
IDD3
(1)
Supply Current
(Erase/Program Suspend)
E = VIH
150
µA
IDD4
(1)
Supply Current (Standby
Disable)
510
mA
VIL
Input Low Voltage
–0.5
0.2VDDQIN
V
VIH
Input High Voltage (for DQ
lines)
0.8VDDQIN
VDDQ +0.3
V
VIH
Input High Voltage (for
Input only lines)
0.8VDDQIN
3.6
V
VOL
Output Low Voltage
IOL = 100µA
0.1
V
VOH
Output High Voltage
CMOS
IOH = –100µA
VDDQ –0.1
V
VLKO
VDD Supply Voltage (Erase
and Program lockout)
2.2
V



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