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ATECC608B датащи(PDF) 7 Page - Microchip Technology |
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ATECC608B датащи(HTML) 7 Page - Microchip Technology |
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7 / 28 page ![]() Table 2-2. AC Parameters: All I/O Interfaces Parameter Sym. Direction Min. Typ. Max. Units Conditions Power-Up Delay(2) tPU To Crypto Device 100 — — µs Minimum time between VCC > VCC min prior to start of tWLO. Wake Low Duration tWLO To Crypto Device 60 — — µs Wake High Delay to Data Comm tWHI To Crypto Device 1500 — — µs SDA should be stable high for this entire duration unless polling is implemented. SelfTest is not enabled at power-up. Wake High Delay when SelfTest is Enabled tWHIST To Crypto Device 20 — — ms SDA should be stable high for this entire duration unless polling is implemented. High-Side Glitch Filter at Active tHIGNORE_A To Crypto Device 45(1) — — ns Pulses shorter than this in width will be ignored by the device, regardless of its state when active. Low-Side Glitch Filter at Active tLIGNORE_A To Crypto Device 45(1) — — ns Pulses shorter than this in width will be ignored by the device, regardless of its state when active. Low-Side Glitch Filter at Sleep tLIGNORE_S To Crypto Device 15(1) — — µs Pulses shorter than this in width will be ignored by the device when in Sleep mode. Watchdog Time-out tWATCHDOG To Crypto Device 0.7 1.3 1.7 s Time from wake until device is forced into Sleep mode if Config.ChipMode[2] is 0. Notes: 1. These parameters are characterized, but not production tested. 2. The power-up delay will be significantly longer if power-on self test is enabled in the Configuration zone. 2.3.1 AC Parameters: Single-Wire Interface Figure 2-2. AC Timing Diagram: Single-Wire Interface t START t ZHI t ZLO Logic Ø t START t BIT Logic 1 t START t TURNAROUND t START SDA Table 2-3. AC Parameters: Single-Wire Interface Unless otherwise specified, applicable from TA = -40°C to +100°C, VCC = +2.0V to +5.5V, CL = 100 pF. ATECC608B Electrical Characteristics © 2020 Microchip Technology Inc. Summary Datasheet DS40002239A-page 7 |
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